首页> 外文OA文献 >Formation of uniform high-density and small-size Ge/Si quantum dots by scanning pulsed laser annealing of pre-deposited Ge/Si film

【2h】

Formation of uniform high-density and small-size Ge/Si quantum dots by scanning pulsed laser annealing of pre-deposited Ge/Si film

机译：通过扫描脉冲激光退火预先沉积的Ge / si薄膜，形成均匀的高密度和小尺寸Ge / si量子点

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Hamza Qayyum; Chieh-Hsun Lu; Ying-Hung Chuang; Jiunn-Yuan Lin; Szu-yuan Chen;
展开▼
作者单位

展开▼
年度 2016
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Formation of uniform high-density and small-size Ge/Si quantum dots by scanning pulsed laser annealing of pre-deposited Ge/Si film [J] . Hamza Qayyum, Chieh-Hsun Lu, Ying-Hung Chuang, AIP Advances . 2016,第5期

机译：通过预沉积Ge / Si膜的扫描脉冲激光退火形成均匀的高密度小尺寸Ge / Si量子点
2. On the Formation of Amorphous Ge Nanoclusters and Ge Nanocrystals in GeSixOy Films on Quartz Substrates by Furnace and Pulsed Laser Annealing [J] . Zhang Fan, Kochubey S. A., Stoffel M., Semiconductors . 2020,第3期

机译：用炉膛和脉冲激光退火形成石英基板上的甘蓝型薄膜的无定形Ge纳米烛虫和Ge纳米晶体的形成
3. Photoelectric Properties of Heterostructures with Oxide Films Containing Si(Ge) Quantum Dots Formed by Pulsed Laser Deposition [J] . A. V. Sachenko, D. V. Korbutyak, Yu. V. Kryuchenko, Journal of Nanoelectronics and Optoelectronics . 2011,第4期

机译：脉冲激光沉积形成的含Si（Ge）量子点的氧化膜异质结构的光电性能
4. Influence of pulsed laser annealing on the properties of Ge quantum dots in Si matrix [C] . E.I. Gatskevich, G.D. Ivlev, V.A. Volodin, Conference on High-Power Laser Ablation . 2008

机译：脉冲激光退火对Si基体中Ge量子点性能的影响
5. Excitation-induced germanium quantum dot growth on silicon(100)-2X1 by pulsed laser deposition [D] . Er, Ali Oguz 2011

机译：脉冲激光沉积硅（100）-2X1上的激发诱导的锗量子点生长
6. Electroanalytical Performance of Nitrogen-Doped Graphene Films Processed in One Step by Pulsed Laser Deposition Directly Coupled with Thermal Annealing [O] . Florent Bourquard, Yannick Bleu, Anne-Sophie Loir, 2019

机译：直接耦合热退火的脉冲激光沉积一步法制氮掺杂石墨烯薄膜的电分析性能
7. Effect of high oxygen pressure annealing on superconducting Nd1.85Ce0.15CuO4thin films by pulsed laser deposition from Cu-enriched targets [O] . M Hoek, F Coneri, D P Leusink, 2014

机译：高氧气压退火对超导Nd1.85ce0.15cuo4膜的脉冲激光沉积从Cu富集的靶

Formation of uniform high-density and small-size Ge/Si quantum dots by scanning pulsed laser annealing of pre-deposited Ge/Si film

著录项

引文网络

相似文献

相关主题

期刊订阅